CXW has launched multiple gallium nitride power supply chips, all designed with QR architecture, which can meet the design requirements of 20W-65W USB PD fast charging power supply.

CX75GD080S is an integrated high-voltage GaNFET power device with high-frequency and high-performance quasi resonant AC/DC conversion power switch. It is applied to a high-performance, low standby power, low-cost, and high-efficiency isolated flyback switching power supply within 27W.

CX75GD080S chip integrates a 650V/800m Ω resistive GaN HEMT, logic controller, and GaN driver internally. It adopts flyback mode and SOP-8L packaging, with an output power of 20W and a maximum operating frequency of 200KHz.

CX75GD025E is an integrated high-voltage GaNFET power device with high-frequency and high-performance quasi resonant AC/DC conversion power switch. It is applied to a high-performance, low standby power, low-cost, and high-efficiency isolated flyback switching power supply within 45W.

The CX75GD025E chip integrates a 650V/250m Ω resistive GaN HEMT, logic controller, and GaN driver internally. It adopts flyback mode and ESOP-10W packaging, with an output power of 45W and a maximum operating frequency of 200KHz.

CX75GD015E is an integrated high-voltage GaNFET power device with high-frequency and high-performance quasi resonant AC/DC conversion power switch. It is applied to a high-performance, low standby power, low-cost, and high-efficiency isolated flyback switching power supply within 65W.

The CX75GD015E chip integrates a 650V/150m Ω resistive GaN HEMT, logic controller, and GaN driver internally. It adopts flyback mode and ESOP-10W packaging, with an output power of 65W and a maximum operating frequency of 200KHz.

Compared to traditional gallium nitride fast charging schemes (such as controllers, drivers, and GaN power devices), CXW has launched multiple sealed gallium nitride chips. The circuit design of the sealed gallium nitride scheme is simple and efficient, with small size and high cost-effectiveness. One chip can complete the functions of the original three chips, effectively reducing the parasitic parameters of the fast charging scheme at high frequencies and significantly reducing the number of peripheral devices on the power chip, While improving power density and efficiency, it can also save costs and effectively shorten product production cycles.